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august 2011 ? 2011 fairchild semiconductor corporation www.fairchildsemi.com fsfr1800 / fsfr1700-hs ? rev.1.0.0 fsfr-hs series ? advanced fairchild power switch (fps?) for half-bridge resonant converter fsfr-hs series ? advanced fairchild power switch (fps?) for half-bridge resonant converters features ? variable frequency control with 50% duty cycle for half-bridge resonant converter topology ? high efficiency through zero voltage switching (zvs) ? built-in high-side gate driver ic ? internal unifet?s with fast-recovery type body diode (t rr =160ns typical) ? fixed dead time (350ns) optimized for mosfets ? operating frequency up to 600khz for soft-start ? self auto-restart operation for all protections, despite external lv cc bias ? line uvlo with programmable hysteresis level ? simple on/off with line uvlo pin ? easy configuration and compatibility with fan7930 for line uvlo without external components ? protection functions: over-voltage protection (ovp), over-current protection (ocp), abnormal over- current protection (aocp), internal thermal shutdown (tsd) applications ? pdp and lcd tvs ? desktop pcs and servers ? adapters ? telecom power supplies description the fsfr-hs is a highly integrated power switch designed for high-efficiency half-bridge resonant converters. offering everythi ng necessary to build a reliable and robust resonant converter, the fsfr-hs simplifies designs while improving productivity and performance. the fsfr-hs combines power mosfets, a high-side gate-drive circuit, an accurate current- controlled oscillator, and built-in protection functions. the high-side gate-drive circuit has a common-mode noise cancellation capability, which provides stable operation with excellent noise immunity. using zero- voltage-switching (zvs) technique dramatically reduces the switching losses and significantly improves efficiency. the zvs also reduces the switching noise noticeably, even though the operating frequency increases. it allows a small electromagnetic interference (emi) filter, besides the high operating frequency, to reduce the volume of the resonant tank and to increase power density. the fsfr-hs can be applied to resonant converter topologies such as series resonant, parallel resonant, and llc resonant converters. related resources an4151 ? half-bridge llc resonant converter design using fsfr-series fairchild power switch (fps?) ordering information part number package operating junction temperature r ds(on_max) maximum output power without heatsink (v in =350~400v) (1,2) maximum output power with heatsink (v in =350~400v) (1,2) fsfr1800hs 9-sip -40 to +130c 0.95 ? 120w 260w fsfr1800hsl 9-sip l-forming FSFR1700HS 9-sip -40 to +130c 1.25 ? 100w 200w FSFR1700HSl 9-sip l-forming notes: 1. the junction temperature can lim it the maximum output power. 2. maximum practical continuous power in an open-frame design at 50c ambient.
? 2011 fairchild semiconductor corporation www.fairchildsemi.com fsfr1800 / fsfr1700-hs ? rev.1.0.0 2 fsfr-hs series ? advanced fairchild power switch (fps?) for half-bridge resonant converter application circuit diagram figure 1. typical application circuit (llc resonant half-bridge converter) block diagram figure 2. internal block diagram
? 2011 fairchild semiconductor corporation www.fairchildsemi.com fsfr1800 / fsfr1700-hs ? rev.1.0.0 3 fsfr-hs series ? advanced fairchild power switch (fps?) for half-bridge resonant converter pin configuration figure 3. package diagram pin definitions pin # name description 1 dl this is the drain of the high-side mosfet, typically connected to the input dc link voltage. 2 ls this is the line-sensing pin for the input voltage under-voltage lockout (uvlo). 3 rt this pin is used for controlling the swit ching frequency in normal operation. when any protections are triggered, the internal auto/resta rt (a/r) circuit starts to sense the voltage on the pin, which is discharged naturally by external resistance. the ic can be operated with a/r when the voltage decreases 0. 1v. typically, an opto-coupler is connected to control the switching frequency for the ou tput voltage regulation and resistors for setting minimum / maximum operating frequency. 4 cs this pin senses the current flowing throu gh the low-side mosfet. typically, negative voltage is applied to this pin. 5 sg this pin is the gr ound of the control part. 6 pg this pin is the power ground. this pin is connected to the source of the low-side mosfet. 7 lv cc this pin is the supply voltage of the control ic. 8 nc no connection 9 hv cc this is the supply voltage of the high-side gate-drive circuit. 10 ctr this is the drain of the low-side mosfet. typically, a transformer is connected to this pin.
? 2011 fairchild semiconductor corporation www.fairchildsemi.com fsfr1800 / fsfr1700-hs ? rev.1.0.0 4 fsfr-hs series ? advanced fairchild power switch (fps?) for half-bridge resonant converter absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the devic e may not function or be operable above the recommended operating conditions and stressi ng the parts to these levels is not recommended. in addition, extended exposure to stresses above the recommend ed operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. symbol parameter min. max. unit v ds maximum drain-to-source voltage (dl-ctr and ctr-pg) 500 v lv cc low-side supply voltage -0.3 25.0 v hv cc to ctr high-side v cc pin to low-side drain voltage -0.3 25.0 v hv cc high-side floating supply voltage -0.3 525.0 v v rt timing resistor connecting and auto-restart pin voltage -0.3 5.0 v v ls line sensing input voltage -0.3 lv cc v v cs current sense (cs) pin input voltage -5 1 v f sw recommended switching frequency 10 600 khz dv ctr /dt allowable low-side mosfet drain voltage slew rate 50 v/ns p d total power dissipation (4) fsfr1800hs/l 11.7 w FSFR1700HS/l 11.6 t j maximum junction temperature (5) +150 ? c recommended operating junction temperature (5) -40 +130 t stg storage temperature range -55 +150 ? c mosfet section v dgr drain gate voltage (r gs =1m ? ) 500 v v gs gate source (gnd) voltage 30 v i dm drain current pulsed (6) fsfr1800hs/l 23 a FSFR1700HS/l 20 i d continuous drain current fsfr1800hs/l t c =25 ? c 7.0 a t c =100 ? c 4.5 FSFR1700HS/l t c =25 ? c 6.0 t c =100 ? c 3.9 package section torque recommended screw torque 5~7 kgfcm notes: 3. these parameters, although guaranteed, ar e tested only in eds (wafer test) process. 4. per mosfet when both mosfets are conducting. 5. the maximum value of the recommended operating ju nction temperature is limited by thermal shutdown. 6. pulse width is limited by maximum junction temperature. thermal impedance t a =25c unless otherwise specified. symbol parameter value unit jc junction-to-case center thermal impedance (both mosfets conducting) fsfr1800hs/l 10.7 oc/w FSFR1700HS/l 10.8
? 2011 fairchild semiconductor corporation www.fairchildsemi.com fsfr1800 / fsfr1700-hs ? rev.1.0.0 5 fsfr-hs series ? advanced fairchild power switch (fps?) for half-bridge resonant converter electrical characteristics t a =25c, lv cc , hv cc =17v dc and r t =26 k ? unless otherwise specified. symbol parameter conditions min. typ. max. unit mosfet section bv dss drain-to-source breakdown voltage i d =200 a, t a =25 ? c 500 v i d =200 a, t a =125 ? c 540 r ds(on) on-state resistance fsfr1800hs/l v gs =10v, i d =3.0a 0.77 0.95 ?? FSFR1700HS/l v gs =10v, i d =2.0a 1.00 1.25 t rr body diode reverse recovery time (7) fsfr1800hs/l v gs =0v, i diode =7.0a, di diode /dt=100a/ s 160 ns FSFR1700HS/l v gs =0v, i diode =6.0a, di diode /dt=100a/ s 160 supply section i lk offset supply leak age current hv cc =v ctr =500v 50 a i q hv cc quiescent hv cc supply current (hv cc uv+) - 0.1v 50 120 a i q lv cc quiescent lv cc supply current (lv cc uv+) - 0.1v 100 200 a i o hv cc operating hv cc supply current (rms value) f osc =50khz 6 9 ma no switching 100 200 a i o lv cc operating lv cc supply current (rms value) f osc =50khz 7 11 ma no switching 2 4 ma uvlo section lv cc uv+ lv cc supply under-voltage positive going threshold (lv cc,start ) 11.2 12.5 13.8 v lv cc uv- lv cc supply under-voltage negative going threshold (lv cc,stop ) 8.9 10.0 11.1 v lv cc uvh lv cc supply under-voltage hysteresis 2.5 v hv cc uv+ hv cc supply under-voltage positive going threshold (hv cc,start ) 8.2 9.2 10.2 v hv cc uv- hv cc supply under-voltage negative going threshold (hv cc,stop ) 7.8 8.7 9.6 v hv cc uvh hv cc supply under-voltage hysteresis 0.5 v oscillator & feedback section v rt output voltage on rt pin r t =26k ? 1.5 2.0 2.5 v f osc output oscillation frequency 47 50 53 khz dc output duty cycle 48 50 52 % protection section v rt,reset threshold voltage to begin restart 0.07 0.12 0.17 v t delay,reset delay to disable osc circuit after protection f osc =50khz 20 ms v line on threshold of input vo ltage 2.38 2.50 2.62 v i line hysteresis current fo r line uvlo 7.5 9.5 11.5 a v ovp lv cc over-voltage protection 21 23 25 v v aocp aocp threshold voltag e -1.0 -0.9 -0.8 v t bao aocp blanking time (7) v cs < v aocp 50 ns v ocp ocp threshold volta ge -0.64 -0.58 -0.52 v t bo ocp blanking time (7) v cs < v ocp 1.0 1.5 2.0 s t da delay time (low-side) detecting from v aocp to switch off (7) 250 400 ns t sd thermal shutdown temperature (7) 120 135 150 ? c dead-time control section d t dead time (8) 350 ns notes: 7. this parameter, although guarantee d, is not tested in production. 8. these parameters, although guaranteed, ar e tested only in eds (wafer test) process.
? 2011 fairchild semiconductor corporation www.fairchildsemi.com fsfr1800 / fsfr1700-hs ? rev.1.0.0 6 fsfr-hs series ? advanced fairchild power switch (fps?) for half-bridge resonant converter typical performance characteristics these characteristic graphs are normalized at t a =25oc. 0.9 0.95 1 1.05 1.1 -50-250 255075100 0.9 0.95 1 1.05 1.1 -50 -25 0 25 50 75 100 normalized at 25c figure 4. low-side mosfet duty cycle vs. temperature figure 5. switching frequency vs. temperature 0.9 0.95 1 1.05 1.1 -50 -25 0 25 50 75 100 normalized at 25c 0.9 0.95 1 1.05 1.1 -50-250 255075100 figure 6. high-side v cc (h v cc ) start vs. temperature figure 7. high-side v cc (h v cc ) stop vs. temperature 0.9 0.95 1 1.05 1.1 -50-250 255075100 0.9 0.95 1 1.05 1.1 -50-250 255075100 figure 8. low-side v cc (l v cc ) start vs. temperature figure 9. low-side v cc (l v cc ) stop vs. temperature
? 2011 fairchild semiconductor corporation www.fairchildsemi.com fsfr1800 / fsfr1700-hs ? rev.1.0.0 7 fsfr-hs series ? advanced fairchild power switch (fps?) for half-bridge resonant converter typical performance characteristics (continued) these characteristic graphs are normalized at t a =25oc. 0.9 0.95 1 1.05 1.1 -50 -25 0 25 50 75 100 temp ( o c) normalized at 25 o c 0.9 0.95 1 1.05 1.1 -50 -25 0 25 50 75 100 temp ( o c) normalized at 25 o c figure 10. lv cc ovp voltage vs. temperature figure 11. rt v oltage vs. temperature 0.9 0.95 1 1.05 1.1 -50 -25 0 25 50 75 100 temp ( o c) normalized at 25 o c figure 12. v rt,reset vs. temperature figure 13. ocp voltage vs. temperatu r e figure 14. v line vs. temperature figure 15. i line vs. temperature
? 2011 fairchild semiconductor corp oration www.fairchildsemi.com fsfr1800 / fsfr1700-hs ? rev.1.0.0 8 fsfr-hs series ? advanced fairchild power switch (fps?) for half-bridge resonant converter typical performance characteristics (continued) these characteristic graphs are normalized at t a =25oc. figure 16. t delay,reset vs. temperature figure 17. v rt,reset vs. temperature
? 2011 fairchild semiconductor corporation www.fairchildsemi.com fsfr1800 / fsfr1700-hs ? rev.1.0.0 9 fsfr-hs series ? advanced fairchild power switch (fps?) for half-bridge resonant converter functional description 1. basic operation: fsfr-hs series is designed to drive high-side and low-side mosfets complementarily with 50% duty cycle. a fixed dead time of 350ns is introduced between consecutive transitions, as shown in figure 18. once lv cc is higher than lv cc,start = 12.5v, the ic starts to operate, generates the low-side gate signal, and drives the low-side mosfet. the bootstrap diode and capacitor is charged by the low-side mosfet?s operation. after the voltage on hv cc increases up to hv cc,start , typically 9.2v, the high-side gate signal is generated for the mosfet. figure 18. mosfet gate drive signals 2. internal oscillator: fsfr-hs series employs a current-controlled oscillator, as shown in figure 19. internally, the voltage of the rt pin is regulated at 2v and the charging / discharging cu rrent for the oscillator capacitor, c t , is obtained by copying the current flowing out of the rt pin (i ctc ) using a current mirror. therefore, the switching frequency increases as i ctc increases. figure 19. current-controlled oscillator 3. frequency setting: figure 20 shows the typical voltage gain curve of a resonant converter, where the gain is inversely proportional to the switching frequency in the zvs region. the output voltage can be regulated by modulating the switching frequency. figure 21 shows the typical circuit configuratio n for the rt pin, where the opto-coupler transistor is connected to the rt pin to modulate the switching frequency. the switching frequency may be controlled from 20khz to 500khz. the minimum switching frequency is determined as: ] hz [ . r p f min min 54 0 792 1 ? ? ? (1) assuming the saturation voltage of opto-coupler transistor is 0.2v, the maximum switching frequency is determined as: ] hz [ . r || r p f max min max 54 0 792 1 ? ? ? (2) figure 20. resonant converter typical gain curve figure 21. frequency control circuit to prevent excessive inrush current and overshoot of output voltage during startup, the ic needs to increase the voltage gain of the res onant converter progressively. since the voltage gain of t he resonant converter is inversely proportional to the switching frequency, soft- start is implemented by sweeping down the switching frequency from an initial high frequency ( f iss ) until the output voltage is established. the soft-start circuit is constructed by connecting r-c series network to the rt pin, as shown in figure 21. initially, the operating fre quency is set by the parallel impedance of r ss and r min .
? 2011 fairchild semiconductor corporation www.fairchildsemi.com fsfr1800 / fsfr1700-hs ? rev.1.0.0 10 fsfr-hs series ? advanced fairchild power switch (fps?) for half-bridge resonant converter the initial maximum frequency can be set up to 600khz, which is given by: ] [ 54 . 0 || 792 1 min hz r r p f ss ss ? ? ? ? (3) the soft-start time, t ss , can be calculated by: ] s [ c r t ss ss ss ? ? ? 3 (4) 4. self auto-restart: the fsfr-hs series can restart automatically even though an y built-in protections are triggered in case external supply voltage is applied. as shown in figure 22 and figure 23; once a protection is triggered, the power mosfet immediately stops. the counter starts to operate and 1008-clocks are counted, then the v-i converter is disabled. c ss starts to be naturally discharged with the series impedance of r ss and r min until v rt drops to v rt,reset , typically 0.1v. then, all protections are reset and the v-i converter resumes. the fsfr-hs starts switching again with soft-start. the counter operating time for 1008-clocks after protection activation is set by the current out of the rt pin until v rt drops to v rt,reset . finally, the stop time of fsfr-hs can be estimated, without considering the counter operation time, as: ?? ] s [ r r c t min ss ss stop ? ? ? 3 (5) figure 22. internal block for auto-restart figure 23. self auto-restart operation 5. protection circuits: the fsfr-hs series has several self-protective functions; such as over-current protection (ocp), abnormal over-current protection (aocp), over- voltage protection (ovp), thermal shutdown (tsd), and line under-voltage lockout (luvlo or brownout). these protections are auto-res tart mode protections, as shown in figure 24. once a fault condition is detected, switching is instantly terminated and the mosfets remain off. when lv cc falls to the lv cc stop voltage of 10v and v rt is lower than v rt,reset of 0.1v, the protection is reset. the fsfr-hs resumes normal operation when lv cc reaches the start voltage of 12.5v. figure 24. protection blocks 5.1 over-current protection (ocp) : when the sensing pin voltage drops below -0.58v and its duration becomes more than ocp blanking time of 1.5s, ocp is triggered and the mosfets remain off. 5.2 abnormal over-current protection (aocp) : if the secondary rectifier diodes are shorted, large current with extremely high di/dt can flow through the mosfet before ocp is triggered. aocp is triggered without shutdown delay if the sensing pin voltage drops below -0.9v. 5.3 over-voltage protection (ovp) : when the lv cc reaches 23v, ovp is triggered. this protection is used when auxiliary winding of the transformer supplies v cc to the fps?. 5.4 thermal shutdown (tsd) : the mosfets and the control ic in one package make it easier for the control ic to detect the abnormal over-temperature of the mosfets. if the temperature exceeds approximately 130 ? c, thermal shutdown triggers. 6. line under-voltage lockout (uvlo): fsfr-hs includes precise line uvlo (or brownout) with programmable hysteresis volt age. this function can start or restart the ic when v ls for the scale-down voltage of the dc-link by the sensing resi stors, r1 and r2, is higher than v line of 2.5v as the dc-lin k voltage increases and vice versa. a hysteresis voltage between the start and stop voltage of the ic is programmable by i line . in normal operation, the comparator?s output is high and i line is deactivated so that a voltage on ls pin, v ls, can be obtained as a divided voltage by r1 and r2. on the contrary, i line is activated when t he comparator?s output is low. v ls is generated by the difference between the current through r1 and i line .
? 2011 fairchild semiconductor corporation www.fairchildsemi.com fsfr1800 / fsfr1700-hs ? rev.1.0.0 11 fsfr-hs series ? advanced fairchild power switch (fps?) for half-bridge resonant converter c filter can be used to reduce some noise induced from transformer or switching transition. generally, hundreds of pico-farad to tens of nano-farad is adequate, depending on the quantity of noise. the start and stop input-voltage can be calculated as: ] [ 2 2 1 , v r r r v v line stop link dc ? ? ? ? (6) ] [ 1 , , v r i v v line stop link dc start link dc ? ? ? ? ? (7) figure 25. half-wave sensing 7. simple remote-on/off: the power stage can be shutdown with optional auto-restart mode, as shown in figure 26. to configure an external protection with auto-restart mode, an opto-coupler and t he ls pin are used. when the voltage on the ls pin is pulled below v line (2.5v), the ic stops during the status holds. however, the opto- coupler stops pulling down and the ic can perform the auto-restart operation itself. figure 26. external protection circuits 8. current-sensing methods: fsfr-hs series employs negative voltage sensing to detect the drain current of mosfet, which allows a low-noise resistive sensing using a filter with low time-constant and capacitive sensing method. 8.1 resistive sensing method: the ic can sense drain current as a negative volt age, as shown in figure 27 and figure 28. half-wave sensing allows low power dissipation in the sensing resistor; while full-wave sensing has less switching noise in the sensing signal. for a time constant range fo r the filter, 3/100~1/10 of the operating frequency is reasonable. figure 27. half-wave sensing figure 28. full-wave sensing 8.2 capacitive sensing method: the drain current can be sensed using an additional capacitor parallel with the resonant capacitor, as shown in figure 29. during the low-side switch turn on, the current, i cb through c b , makes v sense across r sense . the i cb is scale-down of i p by the impedance ratio of c r and c b . generally, 1/100~1/1000 is ad equate for the ratio of c b against c r . r d is used as a damper for reducing noise generated by switching transition. several hundreds of ohm to a few of kilo-ohms can be normally used. v sense can be estimated as; ] [ v r cr c i v sense b pk cr sense ? ? (8) control ic cs sg pg r sense i ds v cs i ds v cs ns np ns c r control ic cs sg pg ns np ns r sense i ds c r i ds v cs v cs
? 2011 fairchild semiconductor corporation www.fairchildsemi.com fsfr1800 / fsfr1700-hs ? rev.1.0.0 12 fsfr-hs series ? advanced fairchild power switch (fps?) for half-bridge resonant converter figure 29. capacitive sensing 9. pcb layout guidelines : duty imbalance problems may occur due to the radiated noise from the main transformer, the inequality of the secondary side leakage inductances of main transformer, and so on. this is one of the reasons that the control components in the vicinity of the rt pin are enclosed by the primary current flow pattern on pcb layout. the direction of the magnetic field on the components caused by the primary current flow is changed when the high- and low-side mosfet turn on by turns. the magnetic fields with opposite directions indu ce a current through, into, or out of the rt pin, whic h makes the turn-on duration of each mosfet different. it is strongly recommended to separate the control compo nents in the vicinity of the rt pin from the primary current flow pattern in the pcb layout. figure 30 shows an example for a duty- balanced case. figure 30. example of duty balancing
? 2011 fairchild semiconductor corporation www.fairchildsemi.com fsfr1800 / fsfr1700-hs ? rev.1.0.0 13 fsfr-hs series ? advanced fairchild power switch (fps?) for half-bridge resonant converter physical dimensions figure 31. 9-lead, single inline package (sip) package drawings are provided as a service to customers consi dering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packa ging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ .
? 2011 fairchild semiconductor corporation www.fairchildsemi.com fsfr1800 / fsfr1700-hs ? rev.1.0.0 14 fsfr-hs series ? advanced fairchild power switch (fps?) for half-bridge resonant converter physical dimensions figure 32. 9-lead, single inline package (sip), l-forming package drawings are provided as a service to customers consi dering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packa ging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ .
? 2011 fairchild semiconductor corporation www.fairchildsemi.com fsfr1800 / fsfr1700-hs ? rev.1.0.0 15 fsfr-hs series ? advanced fairchild power switch (fps?) for half-bridge resonant converter

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